Secondary ion mass spectroscopy (SIMS)

Secondary ion mass spectroscopy, also known as SIMS, is a powerful analytical technique used to characterize the composition of solid surfaces and thin films at the atomic level. SIMS enables the quantitative determination of elemental composition as well as the identification of isotope ratios and molecular structures.

The SIMS process begins by directing a focused ion beam onto the surface of the material to be analyzed. The impinging ions ensure that secondary ions are released from the surface of the material. These secondary ions contain information about the chemical composition of the surface.

The released secondary ions are then fed into a mass spectrometer, where they are separated and detected according to their mass and charge. By measuring the mass-to-charge ratios of the secondary ions, researchers can determine the chemical composition of the surface of the analyzed material.

SIMS offers high sensitivity and high spatial resolution, making it an extremely useful technique for studying surfaces at the microscopic level. It is used in a variety of applications including the semiconductor industry, materials science, geology, biology and forensics. This technique allows researchers to gain detailed insights into the chemical composition of material surfaces, which in turn leads to a better understanding of materials and their properties.