Ion implantation

Ion implantation in plasma surface engineering is a process used to modify the chemical and physical properties of surfaces. This process uses a plasma source reactor to generate ions with high energy and direct them specifically onto the surface of a material.

At the beginning of the process, a plasma is generated from gases, typically in a high vacuum environment. This plasma contains high energy ions that are generated by excitation and ionization of the gases. These ions are then accelerated and focused to direct them onto the surface of the target material.

When the ions hit the surface of the material, they penetrate the layers close to the surface and change the chemical composition and structure of the material. This occurs through various mechanisms such as the accumulation of ions, the formation of defects in the crystal lattice, changes in the surface morphology and chemical reactions with the materials.

Ion implantation in plasma surface technology offers a number of advantages. Firstly, it enables precise control of the implantation parameters such as ion type, energy and dose, which leads to customized modifications of the surface properties. Furthermore, it is a gentle and controlled method that leaves the properties of the base material largely unchanged.

This process is used in a variety of applications, including improving the adhesion of coatings, increasing the wear resistance of tools, optimizing friction properties and modifying electronic components. In the semiconductor industry, ion implantation is often used for doping semiconductor materials in order to specifically change electrical properties. Overall, ion implantation in plasma surface technology offers a powerful method for the targeted modification of surface properties and contributes to the development of advanced materials and technologies.