Chemical mechanical polishing (CMP)

Chemical mechanical polishing (CMP) is a precise surface treatment process that is used in particular in semiconductor production and microsystems technology. The aim of this process is to create a highly flat and smooth surface on silicon wafers or other substrates.

CMP combines chemical and mechanical processes to remove material from the surface while ensuring a highly uniform surface. The process typically begins with the application of a special CMP suspension to the workpiece. This suspension contains abrasive particles that cause material removal, as well as chemical additives that control the process.

During the CMP process, the workpiece is pressed against a rotating grinding wheel. The abrasive effect of the particles in the suspension removes the material, while the chemical reactions simultaneously polish the surface. The combination of grinding and polishing effects makes it possible to produce a very smooth and even surface.

CMP is often used in semiconductor manufacturing to planarize the surfaces of silicon wafers. This is crucial for the production of integrated circuits, as a uniform surface affects the accuracy of lithography and other subsequent processes.

In addition, CMP is also used in other areas, such as optoelectronics or in the manufacture of precision components, where surface quality plays a decisive role. CMP is therefore an essential process for the production of high-precision components with precisely defined surface properties.